Multifunctional Buried Molecule‐Bridge for High‐Performance Inverted Perovskite Solar Cells
TL;DRAbstract
Carbazole-based self-assembled monolayers (SAMs) as an effective hole transportation layer have tremendously advanced the power conversion efficiency (PCE) of inverted perovskite solar cells (PSCs). However, the inhomogeneous distribution of SAMs on substrate and non-intimate interface contact can bring about significant interfacial energy loss at SAM/perovskite heterojunction. Herein, a small molecule 4-Bromobenzylphosphnic acid (4Br-BPA) is constructed as a molecule bridge connecting [4-(3,6-dimethyl-9H-carbazol-9-yl) butyl] phosphonic acid (Me-4PACz) and perovskite, exhibiting multifunctionality on improving the interfacial characteristics. First, the small-size 4Br-BPA molecules can partly fill some voids on NiO<sub>x</sub>/Me-4PACz anchored with NiO<sub>x</sub> via phosphonic acid group, meanwhile ameliorating the NiO<sub>x</sub> surface state. Second, the 4Br-BPA post-deposited onto Me-4PACz interacting with Me-4PACz via π-π stacking has suppressed charge accumulation at interfac
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Carbazole-based self-assembled monolayers (SAMs) as an effective hole transportation layer have tremendously advanced the power conversion efficiency (PCE) of inverted perovskite solar cells (PSCs). However, the inhomogeneous distribution of SAMs on substrate and non-intimate interface contact can bring about significant interfacial energy loss at SAM/perovskite heterojunction. Herein, a small molecule 4-Bromobenzylphosphnic acid (4Br-BPA) is constructed as a molecule bridge connecting [4-(3,6-dimethyl-9H-carbazol-9-yl) butyl] phosphonic acid (Me-4PACz) and perovskite, exhibiting multifunctionality on improving the interfacial characteristics. First, the small-size 4Br-BPA molecules can partly fill some voids on NiO<sub>x</sub>/Me-4PACz anchored with NiO<sub>x</sub> via phosphonic acid group, meanwhile ameliorating the NiO<sub>x</sub> surface state. Second, the 4Br-BPA post-deposited onto Me-4PACz interacting with Me-4PACz via π-π stacking has suppressed charge accumulation at interfac
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