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Epitaxial n- and p-Type Emitters for High Efficiency Solar Cell Concepts

Thomas Rachow,Friedemann D. Heinz,Heinz, F.,S. Janz,S. Reber,Reber, S.-2014-01-01-Publikationsdatenbank der Fraunhofer-Gesellschaft (Fraunhofer-Gesellschaft)
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TL;DRAbstract

Reducing the module prices by increasing the efficiency of solar cells is one of the major challenges in today’s photovoltaic research. The emitter formation by epitaxial growth offers a cost-efficient and faster alternative to the standard furnace diffusion process. The efficiency potential of epitaxial emitters > 22% has already been proven using a single wafer, low pressure, chemical vapour deposition tool. The purpose of this work is to show the potential of epitaxially grown emitters by APCVD (atmospheric pressure chemical vapour deposition) compared to diffused emitters. The APCVD formation of epitaxial emitters at 1,050 °C can be realised as high throughput inline process and only takes 1-2 min, whereas the diffusion process using POCl3 takes up to 60 min. Simulations show an increase in voltage of DVOC = +10 mV and a reduction in saturation current J0 of 30% for the epitaxial emitter. The lifetime experiments of solar cells with epitaxial emitter exhibit a diffusion length L

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Reducing the module prices by increasing the efficiency of solar cells is one of the major challenges in today’s photovoltaic research. The emitter formation by epitaxial growth offers a cost-efficient and faster alternative to the standard furnace diffusion process. The efficiency potential of epitaxial emitters > 22% has already been proven using a single wafer, low pressure, chemical vapour deposition tool. The purpose of this work is to show the potential of epitaxially grown emitters by APCVD (atmospheric pressure chemical vapour deposition) compared to diffused emitters. The APCVD formation of epitaxial emitters at 1,050 °C can be realised as high throughput inline process and only takes 1-2 min, whereas the diffusion process using POCl3 takes up to 60 min. Simulations show an increase in voltage of DVOC = +10 mV and a reduction in saturation current J0 of 30% for the epitaxial emitter. The lifetime experiments of solar cells with epitaxial emitter exhibit a diffusion length L

Keywords

EpitaxyCommon emitterWaferOptoelectronicsMaterials scienceSolar cellChemical vapor depositionSaturation current

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