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Open AccessArticle10.4229/28theupvsec2013-3dv.1.20

10-µm-Thick Polycrystalline Silicon Films Formed by Flash Lamp Annealing

Keisuke Ohdaira-2013-01-01-EU PVSEC
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TL;DRAbstract

10-μm-thick polycrystalline silicon (poly-Si) films are formed by crystallizing thick precursor amorphous Si (a-Si) films by flash lamp annealing (FLA), using a millisecond-order pulse light emitted from a Xe flash lamp. Such thick precursor a-Si films are prepared by catalytic chemical vapor deposition (Cat-CVD). Cat- CVD can provide a-Si films with low hydrogen content and resulting low film stress. Further precise control of the stress of a-Si films by changing the temperatures of a catalyzing wire and/or a holder during a-Si deposition enables to deposit 10-μm-thick a-Si films without cracking or peeling during deposition. We have confirmed the sufficient crystallization of a-Si films by a single shot of flash pulse irradiation not only near the surface but close to the bottom of a 10-μm-thick Si film. This is due to proper annealing duration and resulting thermal diffusion length in a-Si and glass. Increase in the thickness of poly-Si films, achieved in this study, will contribute

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10-μm-thick polycrystalline silicon (poly-Si) films are formed by crystallizing thick precursor amorphous Si (a-Si) films by flash lamp annealing (FLA), using a millisecond-order pulse light emitted from a Xe flash lamp. Such thick precursor a-Si films are prepared by catalytic chemical vapor deposition (Cat-CVD). Cat- CVD can provide a-Si films with low hydrogen content and resulting low film stress. Further precise control of the stress of a-Si films by changing the temperatures of a catalyzing wire and/or a holder during a-Si deposition enables to deposit 10-μm-thick a-Si films without cracking or peeling during deposition. We have confirmed the sufficient crystallization of a-Si films by a single shot of flash pulse irradiation not only near the surface but close to the bottom of a 10-μm-thick Si film. This is due to proper annealing duration and resulting thermal diffusion length in a-Si and glass. Increase in the thickness of poly-Si films, achieved in this study, will contribute

Keywords

Flash-lampAnnealing (glass)Materials scienceCrystalliteSiliconPolycrystalline siliconOptoelectronicsFlash (photography)

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