Growth and characterization of highly oriented AlN films by DC reactive sputtering

doi:https://doi.org/10.1063/1.4917968

Growth and characterization of highly oriented AlN films by DC reactive sputtering

Padmalochan Panda,Bulusu Sravani,R. Ramaseshan,N. Ravi,Feby Jose,S. Dash+1 more-2015-01-01-AIP conference proceedings

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TL;DRAbstract

Wurtzite type AlN thin films were grown on Si (100) substrates at substrate temperatures (S.T.) varying from RT to 600 °C using DC reactive magnetron sputtering by keeping the parameters such as Ar/N2, power and target to substrate distance (TSD) constant. Evolution of preferred orientation of the deposited films was studied by GIXRD and a-axis orientation was observed at 400 °C. The residual stress measurement of these films was carried out by sin2ψ technique and they varied from tensile to compressive (R.T. to 600 °C). Highest hardness (HIT) was observed for 400 °C as 20 GPa, whereas highest modulus was observed for 600 °C as 264 GPa.

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Wurtzite type AlN thin films were grown on Si (100) substrates at substrate temperatures (S.T.) varying from RT to 600 °C using DC reactive magnetron sputtering by keeping the parameters such as Ar/N2, power and target to substrate distance (TSD) constant. Evolution of preferred orientation of the deposited films was studied by GIXRD and a-axis orientation was observed at 400 °C. The residual stress measurement of these films was carried out by sin2ψ technique and they varied from tensile to compressive (R.T. to 600 °C). Highest hardness (HIT) was observed for 400 °C as 20 GPa, whereas highest modulus was observed for 600 °C as 264 GPa.

Keywords

Materials scienceSputteringResidual stressSubstrate (aquarium)Wurtzite crystal structureSputter depositionComposite materialUltimate tensile strength

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