Molecular beam epitaxy growth and characterization of GaN, AlN and AlGaN/GaN heterostructures

TL;DRAbstract

The III-nitride materials, consisting of Al, Ga, In and N, have several physical properties that make them attractive for semiconductor devices in electronic and optic applications. A wide range of direct energy bandgaps (0.7 eV - 6.1 eV) can be obtained. By utilizing this energy span light emitting diodes of all colors and lasers with blue and ultra-violet light have been made. In electronic applications the good electron mobility and the high breakdown field of GaN and AlN make it possible to design high speed and high power diodes and transistors. AlGaN/GaN\nheterostructure field effect transistors have exhibited very high power densities at microwave frequencies. The III-nitride materials are grown by epitaxial techniques. Sapphire is the most commonly used substrate, even though the lattice mismatch is large (13% to AlN). During the initial growth the difference in physical properties causes strain and as the layer relaxes dislocations are formed. The lattice disorder may propagat

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