Influence of Electron Charge States in Nanoelectronic Building Blocks

TL;DRAbstract

The continued efforts to improve performance and decrease size of semiconductor logic devices are facing serious challenges. In order to further develop one of the most important nanoelectronic building blocks, the metal-oxide-semiconductor field-effect-transistor (MOSFET), several major problems have to be solved.This thesis deals with the influence of charge states on two specific issues related to the continued scaling of the MOSFET, the increasing source/drain resistance and the need for a high-k oxide in the MOS gate stack.A silicon nanowire with Schottky source/drain contacts is fabricated on a silicon-on-insulator substrate using electron-beam lithography. It is shown analytically and experimentally how the introduction of positive charge in the oxide surrounding the wire lowers the effective Schottkybarrier due to the added dipole potentials. By using the backside as a gate and measuring the current through the wire as a function of temperature, effective barrier heights of the

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