Chemical Vapor Deposition of Hafnium Oxynitride Films Using Different Oxidants

TL;DRAbstract

As the minimum feature size in complementary metal-oxide-semiconductor (CMOS) devices shrinks, the leakage current through the gate insulator (silicon oxide) will increase sufficiently to impair device operation. A high dielectric constant (k) insulator is needed as a replacement for silicon oxide in order to reduce this leakage. Hafnium-based materials are among the more promising candidates for the gate insulator, however, it is hampered by material quality and thus has been slow to be introduced into high volume integrated circuit production. Hafnium oxynitride films are deposited by Metalorganic Chemical Vapor Deposition (MOCVD) and downstream microwave Plasma Enhanced Chemical Vapor Deposition (PECVD) employing different oxidants including O2, N2O, O2 plasma, N2O plasma, N2O/N2 plasma, and O2/He plasma in the current research. The effects of oxidants on deposition kinetics, morphology, composition, bonding structure, electrical properties and thermal stability of the resultant fil

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