Comparative Lifetime Measurements of Multicrystalline Silicon Wafers by Different Techniques

TL;DRAbstract

Minority charge carrier lifetimes are measured in multicrystalline silicon using a series of different techniques; photoluminescence-imaging, microwave photoconductance decay, carrier density imaging and quasi steady state photoconductance, both with front and back located coils.The different measurements tools are compared and evaluated with respect to trends through the height of an ingot and spatial characteristics within wafers. Mechanical polishing results in lower surface recombination than chemical polishing of as-sawn wafers, and offer more details using the lifetime mapping tools. The different techniques are found to have different advantages with respect to spatial resolution, tolerance for variations in surface properties and calibration of the measurements. All techniques describe the general trend in the ingot, with some variation in the absolute values.

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