Article10.1134/s1027451015030295
Role of migration barriers in the dynamic behavior of short surface dislocations in silicon crystals
В. А. Макара,L. P. Steblenko,А. М. Kuryliuk,Yu. L. Kobzar,A. N. Krit,D. V. Kalinichenko-2015-05-01-Journal of Surface Investigation X-ray Synchrotron and Neutron Techniques
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TL;DRAbstract
The influence of migration barriers on the mobility of short surface dislocations (length L of ≤100 μm) in Si crystals is analyzed in this paper. The dependence of the migration barrier on the diffusion coefficient of impurities that are dominant in Si after surface metallization is established.
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The influence of migration barriers on the mobility of short surface dislocations (length L of ≤100 μm) in Si crystals is analyzed in this paper. The dependence of the migration barrier on the diffusion coefficient of impurities that are dominant in Si after surface metallization is established.
Keywords
Materials scienceImpurityCondensed matter physicsSiliconDiffusionSurface (topology)CrystallographyChemical physics
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