Modeling of graphene nanoribbon field effect transistor

TL;DRAbstract

The scaling of Field Effect Transistor (FET) at nanoscale assures better performance of the device. The phenomenon of downsizing the device dimensions has led to challenges such as short channel effects, leakage current, interconnect difficulties, high power consumption and quantum effects. Therefore, new materials and device structures are needed as alternatives to overcome these challenges. In this research, an analytical model for Trilayer (ABA-stacked) Graphene Nanoribbon carrier statistics based on quantum confinement effect is presented. To this end, density of states, carrier concentration and ballistic conductance of Trilayer Graphene Nanoribbon (TGN) as an FET channel are modeled. Besides that, scaling behaviors of p-n junction, Homo junction, Schottky-barrier diode and Schottkybarrier FET based on the Graphene Nanoribbon application are analytically studied. This is demonstrated in the proposed structure of TGN Schottky-barrier FET that exhibits negligible short channel effec

Chat with Paper

AI Agents for this Paper