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Industrial GaInP/GaAs high Power HBT Process for S-Band and L-Band Applications

H. Blanck,G. Jonsson,Laurent Favede,G. Pataut,Michel Bonnet,D. Floriot-2007-01-01
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TL;DRAbstract

UMS have developed an industrial power HBT process especially dedicated to high power applications in L- and S-Band. Special care has been given to temperature management, required by the technology high power handling capability. Features include a thick thermal drain, for better temperature uniformity and stability, and passive elements for on-chip matching and stabilization circuit. Finally, the technology has been optimized for outstanding reliability as required for space, commercial and military applications.

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UMS have developed an industrial power HBT process especially dedicated to high power applications in L- and S-Band. Special care has been given to temperature management, required by the technology high power handling capability. Features include a thick thermal drain, for better temperature uniformity and stability, and passive elements for on-chip matching and stabilization circuit. Finally, the technology has been optimized for outstanding reliability as required for space, commercial and military applications.

Keywords

Heterojunction bipolar transistorReliability (semiconductor)Electrical engineeringJunction temperaturePower (physics)ChipProcess (computing)Thermal management of electronic devices and systems

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