Magnetic anisotropy and magnetic domain structure in C-doped Mn5Ge3
TL;DRAbstract
Magnetic properties of Mn5Ge3C0.7 thin films grown by molecular beam epitaxy have been studied. SQUID-VSM measurements and magnetic force microscopy have been used to probe the magnetic state and determine the relevant magnetic parameters. The results are supported by a combination of improved Saito's and Kittel's models. The moderate perpendicular magnetic anisotropy (Qexp=2Kuμ0MSat2≈0.2) leads to a stripe domain structure for film thicknesses above 28 nm. For thinner films, the magnetization lies in-plane. The uniaxial magnetocrystalline constant has been found to be much weaker than in Mn5Ge3 and is assigned to hybridization effect between the Mn and C atoms.
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Magnetic properties of Mn5Ge3C0.7 thin films grown by molecular beam epitaxy have been studied. SQUID-VSM measurements and magnetic force microscopy have been used to probe the magnetic state and determine the relevant magnetic parameters. The results are supported by a combination of improved Saito's and Kittel's models. The moderate perpendicular magnetic anisotropy (Qexp=2Kuμ0MSat2≈0.2) leads to a stripe domain structure for film thicknesses above 28 nm. For thinner films, the magnetization lies in-plane. The uniaxial magnetocrystalline constant has been found to be much weaker than in Mn5Ge3 and is assigned to hybridization effect between the Mn and C atoms.
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