Structural, Electrical and Optical Properties of p-Type ZnO Epitaxial Films.

TL;DRAbstract

With a direct band gap energy of 3.37 eV at room temperature and an exciton binding energy of 59 meV, ZnO is a promising material for short-wavelength optoelectronics. The realization of ZnO ¬p-n homojunction devices requires to fabricate stable p-type material with a hole concentration in the 1017-1018 cm-3 range. This thesis addresses the relationships between the microstructure and the optoelectronic properties of acceptor-doped ZnO films fabricated by pulsed laser deposition (PLD). The acceptor dopants studied are nitrogen and phosphorus. The effects of doping, substrate and processing conditions on the film optoelectronic properties are investigated. ZnO epilayers doped uniformly with 1020 nitrogen at./cm3 can be fabricated by ablation of a Zn-rich Zn3N2 target in O2 atmosphere. When the growth temperature exceeds 300 °C, the nitrogen solubility falls rapidly. Films deposited at 300 °C and heat-treated in O2 are p-type with p~1017 cm-3. The moderate level of hole conduction is exp

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