Compositional dependence of high pressure resistivity behaviour of Cu-Ge-Te glasses
TL;DRAbstract
Electrical resistivity measurements under pressures at ambient and low temperatures have been carried out on bulk, melt quenched $Cu_xGe_{15}Te_{85-x}$ glasses (2<x<10) in an opposed anvil set up. The resistivities of these samples are found to decrease continuously with pressure, changing by about six orders of magnitude around 4 GPa pressure The variation of conductivity activation energy with pressure also confirms the continuous metallisation of Cu-Ge-Te samples. The composition dependence of properties such as resistivity at ambient conditions, the pressure derivative of resistance (dp/dp), activation energy for electrical conduction at different pressures, etc., is found to exhibit anomalies at the composition 5 at% Cu. These results are explained on the basis of the rigidity percolation in chalcogenide network glasses.
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Electrical resistivity measurements under pressures at ambient and low temperatures have been carried out on bulk, melt quenched $Cu_xGe_{15}Te_{85-x}$ glasses (2<x<10) in an opposed anvil set up. The resistivities of these samples are found to decrease continuously with pressure, changing by about six orders of magnitude around 4 GPa pressure The variation of conductivity activation energy with pressure also confirms the continuous metallisation of Cu-Ge-Te samples. The composition dependence of properties such as resistivity at ambient conditions, the pressure derivative of resistance (dp/dp), activation energy for electrical conduction at different pressures, etc., is found to exhibit anomalies at the composition 5 at% Cu. These results are explained on the basis of the rigidity percolation in chalcogenide network glasses.
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