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Open AccessArticle10.4229/24theupvsec2009-3bv.4.46

Deposition of Amorphous Silicon Films by Gas Flow Sputtering (GFS)

J. Mahrholz,S. Shikolenko,Bernd Szyszka,Tzyy‐Ping Jung-2009-01-01-EU PVSEC
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TL;DRAbstract

The objective of this work was the development of a high rate and low temperature up-scaled deposition process of semi conductive a-Si:H thin films for solar cell application. The investigations were done with a gas flow sputter source basing on the hollow cathode effect. For reduced ion bombardment defects of a-Si:H films during growth a permanent magnetic shielding was applied and in its effectiveness confirmed. A wide range and complex parameter field was studied by variation of pressure, power, frequency, gas composition and temperature. Film characterization was executed by FTIR, SIMS, XRD, SEM and photo conductivity measurements. The results are very promising and confirm that large area coating on a 150-500 mm scale with GFS technology seams readily available. High deposition rates in the range of 4.5 nm/s or 21 nm*m/min were demonstrated and first light-to-dark photo conductivities giving values of some 103. Typical films were smooth and structure less consisting of nano crysta

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The objective of this work was the development of a high rate and low temperature up-scaled deposition process of semi conductive a-Si:H thin films for solar cell application. The investigations were done with a gas flow sputter source basing on the hollow cathode effect. For reduced ion bombardment defects of a-Si:H films during growth a permanent magnetic shielding was applied and in its effectiveness confirmed. A wide range and complex parameter field was studied by variation of pressure, power, frequency, gas composition and temperature. Film characterization was executed by FTIR, SIMS, XRD, SEM and photo conductivity measurements. The results are very promising and confirm that large area coating on a 150-500 mm scale with GFS technology seams readily available. High deposition rates in the range of 4.5 nm/s or 21 nm*m/min were demonstrated and first light-to-dark photo conductivities giving values of some 103. Typical films were smooth and structure less consisting of nano crysta

Keywords

SputteringSiliconMaterials scienceDeposition (geology)Sputter depositionAmorphous solidOptoelectronicsAmorphous silicon

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