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Open AccessArticle10.12693/aphyspola.87.373

Gain Studies on Photoconductors Made on Partly Compensated GaAs

Ferenc Riesz-1995-02-01-Acta Physica Polonica A
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TL;DRAbstract

The gain behavior of GaAs photoconductors realized on the partly compensated channel of a MESFET is studied. The gain versus light power dependence hints at the domination of the bimolecular recombination and the trap-mediated gain, and only a minor role of the surface photovoltaic effect. The possible correlation between dark current and gain mechanism is pointed out.

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The gain behavior of GaAs photoconductors realized on the partly compensated channel of a MESFET is studied. The gain versus light power dependence hints at the domination of the bimolecular recombination and the trap-mediated gain, and only a minor role of the surface photovoltaic effect. The possible correlation between dark current and gain mechanism is pointed out.

Keywords

Materials scienceOptoelectronics

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