Electrical Properties of Gold-related Defect Complexes in Silicon

TL;DRAbstract

This thesis describes three extensive experiments concerning the properties of gold as an impurity atom in crystalline silicon. The first study is an investigation of the effect of phosphorus diffusion on the distribution of gold atoms within a silicon crystal. It is demonstrated how gold atoms diffuse back and forth between the highly phosphorus-doped surface layer and the bulk of the material when the annealing temperature is varied. This is investigated using secondary ion mass spectroscopy (SIMS) to study the gold within the highly phosphorus-doped layer and using deep level transient spectroscopy (DLTS) to estimate the gold content in the bulk of the specimen. This phenomenon is related to large solubility enhancement of gold in silicon with phosphorus concentrations above approximately 3x1019 atoms/cm3. In the second study, hydrogen-gold complexes are investigated. Hydrogen is injected into the surface region of gold-doped samples during wet etching. From the results of annealing

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