An attempt to design room-temperature-operated nitride diode VCSELs
TL;DRAbstract
The new modified structure of nitride diode vertical-cavity surface-emitting lasers (VCSELs) of anticipated high-performance low-threshold room-temperature operation is presented. Two essential structure modifications are proposed in this new design. First, tunnel junctions and a semi-transparent contact are used to enhance uniformity of the current injection into a VCSEL active region. Second, a new built-in radial waveguiding mechanism is introduced within the output distributed Bragg reflector. According to simulation results, the radius of the active region may be dramatically reduced in this new VCSEL design, even to just 1 µm, without a significant increase in the cavity optical losses. Hence, using this new proposed design, manufacturing low-threshold, electrically-driven, room-temperature-operated nitride VCSELs may become possible even at the current, still immature, development stage of nitride technology.
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The new modified structure of nitride diode vertical-cavity surface-emitting lasers (VCSELs) of anticipated high-performance low-threshold room-temperature operation is presented. Two essential structure modifications are proposed in this new design. First, tunnel junctions and a semi-transparent contact are used to enhance uniformity of the current injection into a VCSEL active region. Second, a new built-in radial waveguiding mechanism is introduced within the output distributed Bragg reflector. According to simulation results, the radius of the active region may be dramatically reduced in this new VCSEL design, even to just 1 µm, without a significant increase in the cavity optical losses. Hence, using this new proposed design, manufacturing low-threshold, electrically-driven, room-temperature-operated nitride VCSELs may become possible even at the current, still immature, development stage of nitride technology.
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