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Abstract : In this work, the growth and characterization of GaAsSbN quantum wells (QWs) grown in an elemental solid source molecular beam epitaxy (MBE) system with a RF plasma nitrogen source is presented. A systematic study has been carried out to determine the influence of various growth conditions such as the source shutter opening sequence, substrate temperature, various nitrogen (N) pressures and annealing in various ambient on the optical and structural properties of the QWs. N and Sb incorporations were found to depend strongly upon both the substrate temperature and source shutter opening sequence. The substrate temperature in the range of 430-470 deg C was found to be Optimum. The presence of Pendullusong and high frequency fringes due to the cap layer were observed in high-resolution x-ray diffraction (HRXRD) spectra of QWs, for N composition variation up to 2.3%, attesting to the excellent structural quality of the grown layers and interfaces. With increase in N concentratio
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Abstract : In this work, the growth and characterization of GaAsSbN quantum wells (QWs) grown in an elemental solid source molecular beam epitaxy (MBE) system with a RF plasma nitrogen source is presented. A systematic study has been carried out to determine the influence of various growth conditions such as the source shutter opening sequence, substrate temperature, various nitrogen (N) pressures and annealing in various ambient on the optical and structural properties of the QWs. N and Sb incorporations were found to depend strongly upon both the substrate temperature and source shutter opening sequence. The substrate temperature in the range of 430-470 deg C was found to be Optimum. The presence of Pendullusong and high frequency fringes due to the cap layer were observed in high-resolution x-ray diffraction (HRXRD) spectra of QWs, for N composition variation up to 2.3%, attesting to the excellent structural quality of the grown layers and interfaces. With increase in N concentratio
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