Amorphous silicon/Langmuir-Blodgett film MIS devices

TL;DRAbstract

Hetal-inaulator-ieniconductor (MIS) structure based on glow discharge produced, hydrogenated amorphous silicon (a-Si:H), and incorporating Langmuir-Blodgett (LB) film inaulating layers, have been investigated. Two distinct types of MIS diode have been considered : tunnelling diodes (insulator thickness < nm) and non-tunnelling diodes (insulator thickness > 10 nm). A preliminary study of insulated-gate field-effect-tranaistors (igfet's) has also been undertaken. Simple Schottky barrier (MS) structures, which are effectively a first step towards tunnelling MIS devices, have been made and characterised : results showed that these were 'state-of-the-art' devices. A preparation procedure has been developed which facilitates the successful deposition of LB film materials onto a-Si:H. Tunnelling MIS diodes containing diacetylene polymer LB insulating films have been fabricated, and capacitance measurements showed that the films were of reasonable quality. The current-voltage characteris

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