Formation of Excess Silicon on 6H-SiC(0001) during Hydrogen Etching

doi:https://doi.org/10.12693/aphyspola.116.s-82

Open AccessArticle10.12693/aphyspola.116.s-82

Formation of Excess Silicon on 6H-SiC(0001) during Hydrogen Etching

M. Grodzicki,R. Wasielewski,S. Surma,A. Ciszewski-2009-12-01-Acta Physica Polonica A

TL;DRAbstract

The surface of 6H-SiC(0001) samples was subjected to etching under H 2 /Ar gas mixture in a cold-wall tubular furnace. Its topography and properties were characterized by atomic force microscopy and X-ray photoelectron spectroscopy before and after hydrogen etching. The conditions have been found, under which surface polishing-related damages could be removed. Si droplets were observed under certain etching conditions. The effect of the samples' cooling rate on the obtained surface morphology and chemistry was investigated to unveil the mechanism of Si recrystallization onto the crystal surface upon etching.

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The surface of 6H-SiC(0001) samples was subjected to etching under H 2 /Ar gas mixture in a cold-wall tubular furnace. Its topography and properties were characterized by atomic force microscopy and X-ray photoelectron spectroscopy before and after hydrogen etching. The conditions have been found, under which surface polishing-related damages could be removed. Si droplets were observed under certain etching conditions. The effect of the samples' cooling rate on the obtained surface morphology and chemistry was investigated to unveil the mechanism of Si recrystallization onto the crystal surface upon etching.

Keywords

Materials scienceEtching (microfabrication)SiliconHydrogenSilicon carbideNanotechnologyChemical engineeringComposite material

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