Fabrication and characterisation of AlGaN/GaN high electron mobolity transistors for power applications

TL;DRAbstract

The III-Nitrides were intensively studied during the last few years due to its tunable band gap range from 0.7 eV for InN to 6.2 eV for AlN. In comparison to other systems III-Nitrides have a much smaller lattice constant and therefore are mechanically stable materials with high breakdown fields. Thanks to these properties are good candidates for possible applications in the field of high-temperature, -power and -frequency electronics.The technological process developed in this work was derived from a HEMT fabrication process already established at our institute. The standard process was improved within the bound of this work by additional processes containing MOSHFET processing, surface passivation, air bridge technology, and field plate processing. HEMTs on undoped and doped layer structures were manufactured.Improved properties of intentionally doped structures in comparison to undoped ones were observed using Hall effect measurements. Results confirmed that layer structures were we

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