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Si nanocrystals in sandwiched SiNx structures

Zsolt Horváth,P. Basa,P. Petrík,Csaba Dücső,T. Jászi,László Dobos+4 more-2005-01-01-Repository of the Academy's Library (Library of the Hungarian Academy of Sciences)

TL;DRAbstract

The structure and composition of multilayered SiNx structures prepared by low pressure chemical vapour deposition were studied by cross-sectional transmission electron microscopy and spectroscopic ellipsometry. Using appropriate deposition parameters and post deposition annealing, well separated Si nanocrystals were obtained with avarage grain size of 8-10 nm.

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The structure and composition of multilayered SiNx structures prepared by low pressure chemical vapour deposition were studied by cross-sectional transmission electron microscopy and spectroscopic ellipsometry. Using appropriate deposition parameters and post deposition annealing, well separated Si nanocrystals were obtained with avarage grain size of 8-10 nm.

Keywords

NanocrystalMaterials scienceAnnealing (glass)Transmission electron microscopyChemical vapor depositionEllipsometryDeposition (geology)Grain size

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