Percolation problem in atomic transport in<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">Hg</mml:mi></mml:mrow><mml:mrow><mml:mn>1</mml:mn><mml:mi>−</mml:mi><mml:mi>x</mml:mi></mml:mrow></mml:msub></mml:mrow><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">Cd</mml:mi></mml:mrow><mml:mrow><mml:mi>x</mml:mi></mml:mrow></mml:msub></mml:mrow><mml:mi mathvariant="normal">Te</mml:mi></mml:math>

TL;DRAbstract

Using high-resolution x-ray diffraction for precise measurements of structural modifications in boron-implanted ${\mathrm{Hg}}_{1\ensuremath{-}x}{\mathrm{Cd}}_{x}\mathrm{Te}$ layers, we found a percolation problem in the long-range diffusion of Cd interstitials through the Cd, Hg sublattice. The percolation threshold ${x}_{c}=0.265$ is in agreement with the calculated one, ${x}_{\mathrm{th}}=0.278,$ for dumbbell interstitials diffusion in the fcc lattice [J. Bocquet, Phys. Rev. B 50, 16 386 (1994)]. These findings were supported by high-resolution scanning electron microscopy images, taken under magnification \ifmmode\times\else\texttimes\fi{}400 000, in which very different post-implantation surface recovery (due to a flux of interstitials from an interior to the crystal surface) was observed below and above ${x=x}_{c}.$ Measurements of x-ray-diffraction profiles in samples, implanted and annealed at 150--350 \ifmmode^\circ\else\textdegree\fi{}C, allowed us to determine an energy barr

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