High-Temperature Scanning Tunnelling Spectroscopy of Transition Metal Oxides

TL;DRAbstract

In sit u hi gh-tem per at ure scanning tunne lli ng spectr oscopy measurements recor ded on the heavily reduced T iO 2 ( 110) sur face w hich contains T i2 O3 regions show ed disapp eara nce of the energy gap accompanied by substantial decrease in amplitud e of the band edge states w ith increasing temp erature . I t indic ates smo oth insulator {metal transition caused by bands overlap in T i 2 O3 , w hich ta kes place at elevated temp eratures. I n si tu high-temp eratu re scanning tunnelli ng microscopy and spectroscopy were used to study the in uence of temp erature on the electronic prop erties of N i x Mn 3 x O3 ( 0 4 1 ) thin lms dep osited by rf magnetron sputtering at three di erent oxygen /argon ( 2.5%, 10%, 15%) containing ambient. T he morphology and distrib uti on of the local density of states of the observed lms did not show any dierence for the lms dep osited at dierent condition s. T he distribu tio n of the local density of states w as temp erature dep endent. T he ch

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