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Article10.1134/s1063782615070040

Dispersion of the refractive index of a samarium-doped Se95Te5 chalcogenide glassy semiconductor

S. U. Atayeva,S. I. Mekhtiyeva,А. I. Isayev-2015-07-01-Semiconductors
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TL;DRAbstract

The transmission spectrum of a Se95Te5 chalcogenide glassy semiconductor doped with samarium (0.05, 0.1, 0.25, 0.5, and 1 at %) is studied; the Swanepoel method and the single-oscillator model are used to determine the oscillator energy E0, dispersion energy Ed, optical width of the band gap Eg, and linear (n) and nonlinear (n2) refractive indices. The changes in the values of these parameters as a result of doping are attributed to modification of the local structure and to a change in the concentration of defect states.

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The transmission spectrum of a Se95Te5 chalcogenide glassy semiconductor doped with samarium (0.05, 0.1, 0.25, 0.5, and 1 at %) is studied; the Swanepoel method and the single-oscillator model are used to determine the oscillator energy E0, dispersion energy Ed, optical width of the band gap Eg, and linear (n) and nonlinear (n2) refractive indices. The changes in the values of these parameters as a result of doping are attributed to modification of the local structure and to a change in the concentration of defect states.

Keywords

ChalcogenideSamariumDopingRefractive indexDispersion (optics)SemiconductorMaterials scienceIndex (typography)

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