Particle deposition on a semiconductor wafer larger than 100 mm in diameter

TL;DRAbstract

Since the year of 2000, the semiconductor wafer diameter has been changed from 200 mm to 300 mm. However, so far, there have not been sufficient theoretical studies on particle deposition on a semiconductor wafer larger than 100 mm in diameter. In the present study, the characteristics of particle deposition velocity on the upper surface of 100, 200 mm sized wafers were investigated both experimentally and numerically. Figure 1 shows the schematic diagrams of the present experimental apparatus and numerical calculation domain, respectively. Experiments were conducted in an ISO class 2 clean room of the line 14 fab of SAMSUNG Electronics Co. The wafer diameter and particles in the present experimental study were 200 mm and PSL particles, respectively. The governing equations of gas flow, energy and particle concentration for steady, incompressible and axis symmetric laminar flow with constant properties were considered in the present numerical study. For the details of the present numer

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