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Open AccessArticle10.1051/epjap/2015150177

Study on polarization characteristics of BiFeO<sub>3</sub>thin films prepared by sol-gel spin-coating technology

Ze Jia,Xiao Wu,Mingming Zhang,Jianlong Xu,Naiwen Zhang,Juin J. Liou-2015-06-19-The European Physical Journal Applied Physics
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TL;DRAbstract

The ferroelectric polarization properties of bismuth ferrite (BFO) thin films deposited on Pt(111)/TiO2/SiO2/Si(100) substrates by sol-gel spin-coating technology affected by the processes and dopants have been studied and analyzed tentatively. The results indicate BFO thin film should be introduced to a rapid thermal annealing (RTA) process at N2 atmosphere. The enhanced ferroelectric polarization properties were observed in Mn and La doped BFO thin films, because ion substitution may improve the inherent volatility of Bi atoms, valence fluctuation of Fe ions and magnetic spin structures, reducing the formation of oxygen vacancies. The increased remnant polarization observed in the BFO thin film with a lead zirconate titanate (PZT) seeding layer has also been analyzed as the probable results of small changes of lattice parameters caused by constraint stress, reduced defects and decreased leakage current density, which are contributed by the PZT seeding layer possibly. Moreover, the re

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The ferroelectric polarization properties of bismuth ferrite (BFO) thin films deposited on Pt(111)/TiO2/SiO2/Si(100) substrates by sol-gel spin-coating technology affected by the processes and dopants have been studied and analyzed tentatively. The results indicate BFO thin film should be introduced to a rapid thermal annealing (RTA) process at N2 atmosphere. The enhanced ferroelectric polarization properties were observed in Mn and La doped BFO thin films, because ion substitution may improve the inherent volatility of Bi atoms, valence fluctuation of Fe ions and magnetic spin structures, reducing the formation of oxygen vacancies. The increased remnant polarization observed in the BFO thin film with a lead zirconate titanate (PZT) seeding layer has also been analyzed as the probable results of small changes of lattice parameters caused by constraint stress, reduced defects and decreased leakage current density, which are contributed by the PZT seeding layer possibly. Moreover, the re

Keywords

Materials scienceBismuth ferriteFerroelectricityThin filmSpin coatingLead zirconate titanateAnnealing (glass)Sol-gel

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