Comparison of 4H-SiC and 6H-SiC MOSFET I-V characteristics simulated with Silvaco Atlas and Crosslight Apsys
J. Stęszewski,A. Jakubowski,Michael L. Korwin-Pawlowski-2007-09-30-Journal of Telecommunications and Information Technology
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TL;DRAbstract
A set of physical models describing silicon carbide with fitting parameters is proposed. The theoretical I-V output and transfer characteristics and parameters of MOS transistors were calculated using Silvaco Atlas and Crosslight Apsys semiconductor device simulation environments
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A set of physical models describing silicon carbide with fitting parameters is proposed. The theoretical I-V output and transfer characteristics and parameters of MOS transistors were calculated using Silvaco Atlas and Crosslight Apsys semiconductor device simulation environments
Keywords
Silicon carbideAtlas (anatomy)MOSFETMaterials scienceOptoelectronicsSemiconductorSiliconTransistor
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