Book Chapter10.1007/978-3-319-01165-3_6
Hafnium Dioxide-Based Double-Pole Four-Throw Double-Gate RF CMOS Switch
Viranjay M. Srivastava,Ghanshyam Singh-2013-08-14-Analog circuits and signal processing/Analog circuits and signal processing series
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Keywords
Materials scienceMOSFETElectrical engineeringOptoelectronicsRF switchCMOSCapacitanceGate dielectric
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