Voltage Controlled Terahertz Transmission Enhancement through GaN Quantum Wells
T. Laurent,Rajesh Sharma,J. Torres,P. Nouvel,S. Blin,Laurent Chusseau+9 more-2011-02-01-Acta Physica Polonica A
1PDF
TL;DRAbstract
We report transmission measurements of GaN quantum well grown on sapphire substrate in the 220-325 GHz frequency band at low temperatures. A significant enhancement of the transmitted beam intensity with the applied voltage on the devices under test is found.
Chat with Paper
AI Agents for this Paper
We report transmission measurements of GaN quantum well grown on sapphire substrate in the 220-325 GHz frequency band at low temperatures. A significant enhancement of the transmitted beam intensity with the applied voltage on the devices under test is found.
Keywords
Terahertz radiationOptoelectronicsMaterials scienceTransmission (telecommunications)SapphireQuantum wellVoltageSubstrate (aquarium)
Chat
Click to start Chat