Electrical and ESR Studies of GaN Layers Grown by Metal Organic Chemical Vapour Deposition
TL;DRAbstract
Electrical transport and ESR studies were performed on the state-of-the--art GaN 1ayers grown on sapphire substrate using metal organic chemical vapour deposition technique. For undoped samples electron concentration below 2 x 10 17 cm-1 and mobility up to 500 cm 2 /(V s) were achieved whereas hole concentration up to 7 x 10 17 cm-3 and mobility about 16 cm2 /(V s) were obtained for intentionally Mg doped samples and subsequently annealed. Temperature dependence of mobility was discussed. ESR revealed tle presence of two resonance absorption lines. One of them with g1 = 1.9487 and g|| = 1.9515, commonly observed in n-type GaN was due to shallow donor.
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Electrical transport and ESR studies were performed on the state-of-the--art GaN 1ayers grown on sapphire substrate using metal organic chemical vapour deposition technique. For undoped samples electron concentration below 2 x 10 17 cm-1 and mobility up to 500 cm 2 /(V s) were achieved whereas hole concentration up to 7 x 10 17 cm-3 and mobility about 16 cm2 /(V s) were obtained for intentionally Mg doped samples and subsequently annealed. Temperature dependence of mobility was discussed. ESR revealed tle presence of two resonance absorption lines. One of them with g1 = 1.9487 and g|| = 1.9515, commonly observed in n-type GaN was due to shallow donor.
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