Peculiarities of Excitonic Photoluminescence in Si δ-Doped GaAs Structures

TL;DRAbstract

We present investigation of photoluminescence properties of Si -doped GaAs structures at different temperatures and various laser excitation intensities. Strong excitonic emission was observed in the -doped structures. The photoluminescence in the infrared region, below excitonic emission, originates from a non-phonon free electron-acceptor e-A transitions and longitudinal optical phonon sidebands of e-A transitions. Possible mechanisms for recombination of photocarriers are discussed, with a particular focus on an enhanced excitonic photoluminescence emission in comparison with that from intrinsic GaAs layers of the same structures.

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