An analysis of 1.55μm InAs∕InP quantum dash lasers

doi:https://doi.org/10.1063/1.2952194

An analysis of 1.55μm InAs∕InP quantum dash lasers

Susannah C. Heck,S.B. Healy,S. Osborne,Eoin P. O’Reilly,F. Lelarge,F. Poingt+4 more-2008-06-23-Applied Physics Letters

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TL;DRAbstract

Calculations show that electron states are not confined in the dashes in 1.55μm InAs∕InP quantum dash-in-a-well laser structures. The combination of strain and three-dimensional confinement reduces the calculated density of states (DOS) near the valence band maximum, with the conduction and valence DOS then almost equal close to the band edges. Calculations and photoabsorption measurements show strongly polarized spontaneous emission and gain spectra. Experimental analysis shows the room temperature threshold current is dominated by nonradiative current paths.

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Calculations show that electron states are not confined in the dashes in 1.55μm InAs∕InP quantum dash-in-a-well laser structures. The combination of strain and three-dimensional confinement reduces the calculated density of states (DOS) near the valence band maximum, with the conduction and valence DOS then almost equal close to the band edges. Calculations and photoabsorption measurements show strongly polarized spontaneous emission and gain spectra. Experimental analysis shows the room temperature threshold current is dominated by nonradiative current paths.

Keywords

LaserQuantum wellValence (chemistry)Atomic physicsSpectral lineValence bandElectronCondensed matter physics

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