X-ray Standing Wave Studies of Si (111) Crystal Implanted by Fe and Ni Ions
TL;DRAbstract
The X-Ray Standing Wave Method (XRSW) was applied for the investigation of the silicon samples implanted with 80 keV Fe and Ni ions. The samples were measured by the XRSW method before and after annealing process. For theoretical calculations the two layer model was used. The analysis revealed that after annealing only a slight amount 2 0 3 0 % ) o f t h e implanted atoms occupy the position of the Si crystal planes. The Rutherford backscattering (RBS) experiment that confirms the results obtained by the XRSW method was performed.
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The X-Ray Standing Wave Method (XRSW) was applied for the investigation of the silicon samples implanted with 80 keV Fe and Ni ions. The samples were measured by the XRSW method before and after annealing process. For theoretical calculations the two layer model was used. The analysis revealed that after annealing only a slight amount 2 0 3 0 % ) o f t h e implanted atoms occupy the position of the Si crystal planes. The Rutherford backscattering (RBS) experiment that confirms the results obtained by the XRSW method was performed.
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