Article
Transient radiation hardening of CMOS LSI and VLSI memory circuits
L. W. Massengill,S. E. Diehl-Nagle-1984-01-01-OSTI OAI (U.S. Department of Energy Office of Scientific and Technical Information)
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TL;DRAbstract
Transient radiation upset in CMOS LSI and VLSI memory circuits has been studied by computer simulation. A new type of upset mechanism is identified and hardening schemes are proposed.
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Transient radiation upset in CMOS LSI and VLSI memory circuits has been studied by computer simulation. A new type of upset mechanism is identified and hardening schemes are proposed.
Keywords
Radiation hardeningVery-large-scale integrationCMOSHardening (computing)Electronic circuitTransient (computer programming)Electronic engineeringMaterials science
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