Scaling of the ferroelectric field effect transistor and programming concepts for non-volatile memory applications

TL;DRAbstract

The importance of non-volatile memory for storage of digital information is without question. Research over the years has led to many different types of memory, each tailored to a specific need. Always, however, the search has continued for a universal type that combines high speed operation with non-volatility. One memory device with these properties is the ferroelectric Field Effect Transistor (FeFET), which is the object of study in this thesis. First, a short introduction to non-volatile memories is given. Then a comparison of the various alternatives is made which shows that the FeFET has a number of advantages compared to other non-volatile memory devices. Then the principles of operation of the FeFET are described based on the operation of the MOSFET and the ferroelectric capacitor. Using a transistor model and a mathematical algorithm for calculating the ferroelectric polarization, the FeFET model is derived. Further, the various challenges that the FeFET faces are elaborated.

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