4H-SiC detectors for low level ultraviolet detection

TL;DRAbstract

Ultraviolet radiation covers the wavelength from 400nm down to 10nm. The superior material properties of 4H-SiC make visible-blind, ultra sensitive and low noise UV photodetectors possible. The major objective of this Ph.D. thesis research is to design and fabricate high performance 4H-SiC photodetectors for low-level UV detection. Schottky photodiodes, avalanche PIN photodiodes and avalanche phototransistors are studied for various applications. In this study, the first 4H-SiC Schottky photodiode that can fully cover EUV to NUV range has been successfully fabricated. Ultralow leakage current, high quantum efficiency and high UV-to-visible rejection ratio have been achieved. The first 1x16 4H-SiC Schottky photodiode array with very large detection area has been successfully fabricated and characterized. A novel UV spectrographic system using the 4H-SiC Schottky photodiode array is demonstrated with a fine spectrum resolution. 4H-SiC single photon avalanche photodiode (SPAD) is studied

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