Three- versus Two-Dimensional Electron Gas Injection in Resonant Tunnelling

doi:https://doi.org/10.12693/aphyspola.88.707

Open AccessArticle10.12693/aphyspola.88.707

Three- versus Two-Dimensional Electron Gas Injection in Resonant Tunnelling

T. Figielski,T. Wosiński,A. Mąkοsa,M. Kaniewska,K. Regiński-1995-10-01-Acta Physica Polonica A

TL;DRAbstract

A small "precursor" of resonance is observed before the main resonance peak in the current-voltage characteristic of double-barrler resonant-tunnelling devices. The ckpetitioii between the precursor and main-peak current is examined within the temperature range 4.2-400 K. The precursor is interpreted as 3DEG contribution to the resonant tunnelling dominated by a 2DEG injection from a triangular well formed under bias in the emitter spacer layer.

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A small "precursor" of resonance is observed before the main resonance peak in the current-voltage characteristic of double-barrler resonant-tunnelling devices. The ckpetitioii between the precursor and main-peak current is examined within the temperature range 4.2-400 K. The precursor is interpreted as 3DEG contribution to the resonant tunnelling dominated by a 2DEG injection from a triangular well formed under bias in the emitter spacer layer.

Keywords

Quantum tunnellingElectronMaterials scienceAtomic physicsPhysicsCondensed matter physicsQuantum mechanics

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