Deep Electron Traps in CdTe:In Films Grown by Molecular Beam Epitaxy

doi:https://doi.org/10.12693/aphyspola.88.961

Open AccessArticle10.12693/aphyspola.88.961

Deep Electron Traps in CdTe:In Films Grown by Molecular Beam Epitaxy

A.K. Żakrzewski,L. Dobaczewski,G. Karczewski,T. Wójtowicz,J. Kossut-1995-11-01-Acta Physica Polonica A

TL;DRAbstract

N-type indium doped CdTe grown on n+-GaAs by molecular beam epitaxy has been studied by the standard deep level transient spectroscopy and the isothermal Laplace-transform deep level transient spectroscopy. It was found that the Cd/Te flux ratio strongly influences the deep evel transient spectroscopy results. The unusual temperature dependence of the electron emission rate in films grown at nearly stoichiketric conditions may point out that the observed defect is resonant with the conduction band.

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N-type indium doped CdTe grown on n+-GaAs by molecular beam epitaxy has been studied by the standard deep level transient spectroscopy and the isothermal Laplace-transform deep level transient spectroscopy. It was found that the Cd/Te flux ratio strongly influences the deep evel transient spectroscopy results. The unusual temperature dependence of the electron emission rate in films grown at nearly stoichiketric conditions may point out that the observed defect is resonant with the conduction band.

Keywords

Deep-level transient spectroscopyMolecular beam epitaxyMaterials scienceDopingCadmium telluride photovoltaicsIsothermal processIndiumOptoelectronics

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