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The DARPA manufacturing initiative in high temperature superconductivity

K.R. Adams-1989-01-01-OSTI OAI (U.S. Department of Energy Office of Scientific and Technical Information)
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TL;DRAbstract

The Defense Advanced Research Projects Agency (DARPA) has a very aggressive Technology Base program in high temperature superconductivity. This program is expected to provide the basis for a specialized set of military products - passive microwave and millimeter wave devices - within the next three years. In order to get these high leverage products into military systems, a manufacturing base must be developed for HTSC components. A plan for DARPA in HTSC manufacturing is directly coupled with the ongoing DARPA materials and device oriented R and D program. In essence, this plan recommends a three phased effort: 1. Phase I (two years); Fund companies through R and D contracts for specialized HTSC components; prepare a detailed plan and develop an HTSC consortium. 2. Phase II (six years): Establish an HTSC Sematech initiative for electronic applications, including active devices. 3. Phase III (optional): Continue the HTSC Sematech with emphasis on high power applications.

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The Defense Advanced Research Projects Agency (DARPA) has a very aggressive Technology Base program in high temperature superconductivity. This program is expected to provide the basis for a specialized set of military products - passive microwave and millimeter wave devices - within the next three years. In order to get these high leverage products into military systems, a manufacturing base must be developed for HTSC components. A plan for DARPA in HTSC manufacturing is directly coupled with the ongoing DARPA materials and device oriented R and D program. In essence, this plan recommends a three phased effort: 1. Phase I (two years); Fund companies through R and D contracts for specialized HTSC components; prepare a detailed plan and develop an HTSC consortium. 2. Phase II (six years): Establish an HTSC Sematech initiative for electronic applications, including active devices. 3. Phase III (optional): Continue the HTSC Sematech with emphasis on high power applications.

Keywords

Leverage (statistics)EngineeringElectronic equipmentPlan (archaeology)Phase (matter)Electrical engineeringSystems engineeringTelecommunications

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