Study of DI-Hydrogen-Monovacancy Defect in Silicon

doi:https://doi.org/10.12693/aphyspola.92.989

Open AccessArticle10.12693/aphyspola.92.989

Study of DI-Hydrogen-Monovacancy Defect in Silicon

Peter Stallinga,Birgitte Nielsen-1997-11-01-Acta Physica Polonica A

TL;DRAbstract

A careful analysis of the alleged electron paramagnetic resonance spectrum of VH2 in silicon is made. The parameters of this spectrum coincide with those of the well-known excited state (S = 1) spectrum of the oxygen vacancy defect. The conclusion is reached that they are one and the same.

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A careful analysis of the alleged electron paramagnetic resonance spectrum of VH2 in silicon is made. The parameters of this spectrum coincide with those of the well-known excited state (S = 1) spectrum of the oxygen vacancy defect. The conclusion is reached that they are one and the same.

Keywords

Materials scienceSiliconHydrogenAtomic physicsPhysicsOptoelectronicsQuantum mechanics

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