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SEMICONDUCTOR NUCLEAR DETECTORS

H. M. Mann,J.W. Haslett,F. J. Janarek-1962-01-01-OSTI OAI (U.S. Department of Energy Office of Scientific and Technical Information)
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Results on the preparation and use of lithium-ion-drifted junctions in silicon for nuclear detection are summarized. Lithium was diffused into silicon in vacuum at 350 to 400 deg C. After drift nt 150 deg C in a silicone oil bath, a sensitive thickness of 2 to 4 mm was obtained. The response to protons at energies from 4.5 to 10 Mev was linear to within plus or minus 0.3%. The resolution width for protons at the higher energy, and for deuterons at 20 Mev, was limited by beam energy spread in the Argonne 60-in. cyclotron. The resolution width for electrons was 26 kev (at 500 kev and 1 Mev) and that for gamma rays was 9 kev (at 661 kev). (auth)

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Results on the preparation and use of lithium-ion-drifted junctions in silicon for nuclear detection are summarized. Lithium was diffused into silicon in vacuum at 350 to 400 deg C. After drift nt 150 deg C in a silicone oil bath, a sensitive thickness of 2 to 4 mm was obtained. The response to protons at energies from 4.5 to 10 Mev was linear to within plus or minus 0.3%. The resolution width for protons at the higher energy, and for deuterons at 20 Mev, was limited by beam energy spread in the Argonne 60-in. cyclotron. The resolution width for electrons was 26 kev (at 500 kev and 1 Mev) and that for gamma rays was 9 kev (at 661 kev). (auth)

Keywords

Semiconductor detectorCyclotronSiliconNuclear physicsLithium (medication)PhysicsSemiconductorElectron

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