Ultrashort-pulse laser ablation of silicon toward device applications

TL;DRAbstract

This thesis presents investigations on ultrafast laser irradiation of silicon towards the goal of hybridizing ultrafast laser processing and conventional semiconductor fabrication techniques to improve device applications. The fundamental sub-threshold damage accumulation mechanisms for potential defect engineering applications were studied through the use of positron annihilation spectroscopy, in situ sample heating during laser irradiation, varying the laser repetition rate, and samples implanted with various ion species at different conditions. Positron annihilation spectroscopy results suggest an increase in the divacancy density at the surface region of silicon following near- and slightly sub-threshold ultrafast laser irradiations. Laser irradiations at increasing sample temperature up to 600°C show a general decreasing trend of single-shot thresholds, and an increase in the suppression of sub-threshold damage accumulation. There is also a temperature dependence on the surface mor

Chat with Paper

AI Agents for this Paper