Preface

TL;DRAbstract

The field of monolithic microwave integrated circuits (MMICs) emerged in the late 1970s and early 1980s with the development of the first GaAs MESFET and pseudomorphic high electron mobility transistor (p-HEMT) IC technologies and started to thrive in the mid-to-late 1990s once the performance of silicon transistors became adequate for radio frequency (RF) applications above 1GHz. Since then, CMOS, SiGe BiCMOS, and III-V HEMT, and heterojunction bipolar transistor (HBT) technology scaling to nanometer dimensions and THz cutoff (fT) and oscillation frequencies (fMAX) has continued unabated. Despite the increasing dominance of CMOS, each of these technologies has carved its own niche in the high-speed, RF, microwave, and mm-wave IC universe. Today’s nanoscale 3-D tri-gate MOSFET is a marvel of atomic-layer and mechanical strain engineering with more “exotic” materials, heterojunctions, and compounds than any SiGe HBT or III-V device. Indeed, InGaAs and Ge are expected to displace silicon

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