Design of optical component structure for Al_<i>x</i>Ga_<i>1-x</i>N photocathodes

TL;DRAbstract

Al<i>x</i>Ga<i>1-x</i>N photocathode was prepared by MOCVD and the reflectivity, transmittance, and absorptivity were test. Based on thin film principle, optical model of t-mode Al<i>x</i>Ga<i>1-x</i>N photocathodes was built, and then optical properties and quantum efficiencies were simulated. Results show that Al<i>x</i>Ga<i>1-x</i>N photocathodes satisfy the need of detectors with “solar blind” property when the Al component is larger than 0.250. There is an optimal thickness of Al<i>x</i>Ga<i>1-x</i>N layer to obtain highest quantum efficiency, and the optimal thickness is 0.3&mu;m. There is close relation between absorptivity and quantum efficiency, which is in good agreement with the “three-step” model. This work gives a reference for the design and preparation of Al<i>x</i>Ga_<i>1-x</i>N photocathodes.

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