Structural defects in CdTe and related materials

TL;DRAbstract

This work is concerned with the characterisation and observation of structural defects in bulk crystals of CdTe and Cd(_0.96)Zn(_0.04)Te and epitaxial layers of Cd(_0.24)Hg(_0.76)Te, and the validation of appropriate characterisation techniques. The driving force behind this project being the use of Cd(_x)Hg(_1-x)Te as an infra-red detector material. The cathodoluminescence technique has been shown to be an excellent technique for both the qualitative and quantitative identification of structural defects in bulk CdTe and (Cd,Zn)Te. The temperature dependent CL contrast technique is developed and is used to quantitatively distinguish dislocations and precipitates which are represented by a qualitatively similar contrast in CL micrographs. The contrast variations at both type of defect are discussed, and the temperature dependence of the contrast at dislocations is compared with contrast theories derived for the complementary electron beam induced current (EBIC) technique. The action of

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