SiC Trench MOSFET With Shielded Fin-Shaped Gate to Reduce Oxide Field and Switching Loss
2016 · IEEE Electron Device Letters · 73 citations
https://doi.org/10.1109/led.2016.2599921
J
Jin Wei
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Jin Wei is an academic researcher from Peking University. The author has contributed to research in topics: GaN-based semiconductor devices and materials & Silicon Carbide Semiconductor Technologies & Semiconductor materials and devices. The author has an h-index of 40, co-authored 208 publications.
ORCID: 0000-0001-6124-0110Papers by this author
works2D materials as semiconducting gate for field-effect transistors with inherent over-voltage protection and boosted ON-current
2019 · npj 2D Materials and Applications · 48 citations
https://doi.org/10.1038/s41699-019-0106-6
Integrated High-Speed Over-Current Protection Circuit for GaN Power Transistors
2019 · 24 citations
https://doi.org/10.1109/ispsd.2019.8757685
A 1200-V GaN/SiC cascode device with E-mode p-GaN gate HEMT and D-mode SiC junction field-effect transistor
2019 · Applied Physics Express · 11 citations
https://doi.org/10.7567/1882-0786/ab4741
Deceleration of polar molecules by synchronous stimulated radiation force with low power light
2025 · Physics Letters A · 1 citations
https://doi.org/10.1016/j.physleta.2025.130511
7 kV/16.5 mΩ·cm <sup>2</sup> E-mode active-passivation p-GaN gate HEMT exceeding SiC unipolar limit
2025 · Semiconductor Science and Technology · 0 citations
https://doi.org/10.1088/1361-6641/ae14a4
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