SiC Trench MOSFET With Shielded Fin-Shaped Gate to Reduce Oxide Field and Switching Loss
2016 · IEEE Electron Device Letters · 73 citations
https://doi.org/10.1109/led.2016.2599921
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102
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i10-index
Huaping Jiang is an academic researcher from Chongqing University. The author has contributed to research in topics: Silicon Carbide Semiconductor Technologies & Advancements in Semiconductor Devices and Circuit Design & Semiconductor materials and devices. The author has an h-index of 23, co-authored 87 publications.
ORCID: 0000-0002-0877-5578https://doi.org/10.1109/led.2016.2599921
https://doi.org/10.1088/1674-4926/45/5/052301
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