2D materials as semiconducting gate for field-effect transistors with inherent over-voltage protection and boosted ON-current
2019 · npj 2D Materials and Applications · 48 citations
https://doi.org/10.1038/s41699-019-0106-6
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Zheyang Zheng
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Zheyang Zheng is an academic researcher from University of Science and Technology of China. The author has contributed to research in topics: GaN-based semiconductor devices and materials & Semiconductor materials and devices & Silicon Carbide Semiconductor Technologies. The author has an h-index of 32, co-authored 114 publications.
ORCID: 0000-0002-6455-9300Papers by this author
worksStrain Release in GaN Epitaxy on 4° Off‐Axis 4H‐SiC
2022 · Advanced Materials · 40 citations
https://doi.org/10.1002/adma.202201169
A 1200-V GaN/SiC cascode device with E-mode p-GaN gate HEMT and D-mode SiC junction field-effect transistor
2019 · Applied Physics Express · 11 citations
https://doi.org/10.7567/1882-0786/ab4741
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